System and method for manufacturing double epi n-type lateral diffusion metal oxide semiconductor transistors

ABSTRACT

A system and a method are disclosed for manufacturing double epitaxial layer N-type lateral diffusion metal oxide semiconductor transistors. In one embodiment two N-type buried layers are used to minimize the operation of a parasitic PNP bipolar transistor. The use of two N-type buried layers increases the base width of the parasitic PNP bipolar transistor without significantly decreasing the peak doping profiles in the two N-type buried layers. In one embodiment two N-type buried layers and one P-type buried layer are used to form a protection NPN bipolar transistor that minimizes the operation of parasitic NPN bipolar transistor. The N-type lateral diffusion metal oxide semiconductor transistors of the invention are useful in inductive full load or half bridge converter circuits that drive very high current.

TECHNICAL FIELD OF THE INVENTION

The present invention is generally directed to methods for manufacturingsemiconductor devices and, in particular, to a system and method formanufacturing double epitaxial layer N-type lateral diffusion metaloxide semiconductor transistors.

BACKGROUND OF THE INVENTION

In the semiconductor manufacturing industry diffusion metal oxidesemiconductor (DMOS) transistors are commonly used in power integratedcircuits. A DMOS transistor comprises a source region and a body region.During the manufacture of a DMOS transistor the source region and thebody region are simultaneously diffused so that the channel length ofthe DMOS transistor is defined by the difference between the twodiffusion lengths. The double diffusion feature of the DMOS transistorpermits a short channel region to be formed that can control large draincurrents by the gate voltage of the DMOS transistor. In a DMOStransistor a drift region is formed between the short channel and thedrain of the DMOS transistor.

DMOS transistors are categorized as either vertical DMOS (VDMOS)transistors or lateral DMOS (LDMOS) transistors depending upon thedirection of the current path in the transistor. In a lateral DMOStransistor the source region and the drain region are located onapproximately the same level of the transistor so that the direction ofthe current path is generally in a lateral direction.

Undesirable modes of operation may occur in a DMOS transistor. Theseundesirable modes of operation are generally referred to as “parasitic”modes of operation. These parasitic modes of operation may take the formof an undesirable parasitic bipolar transistor that is formed within thestructure of the DMOS transistor. For example, consider the prior artN-type lateral DMOS device 100 that is shown in FIG. 1. N-type lateralDMOS device 100 is designed to be used for inductive full load or halfbridge converters. The letters STI in FIG. 1 refer to and designate“shallow trench isolation” structures in the device 100. As shown inFIG. 1, the structure of device 100 forms a parasitic PNP bipolartransistor 110 on the high side of the device 100 and forms a parasiticNPN bipolar transistor 120 of the low side of the device 100.

The parasitic PNP bipolar transistor 110 is formed in the Ndrift region130 between the P-type body 140 and the P-substrate 150. The presence ofthis parasitic PNP bipolar transistor 110 can cause latch up problems inthe operation of the N-type lateral DMOS device 100.

The parasitic NPN bipolar transistor 120 is formed in the P-substrate150 between the Ndrift region 130 and the Nwell 160. The presence ofthis parasitic NPN bipolar transistor 120 can also cause malfunctions inthe operation of the N-type lateral DMOS device 100.

One prior art approach to reducing the effect of the presence of theparasitic PNP bipolar transistor 110 is shown in the structure 200 thatis shown in FIG. 2. A heavily doped N-type buried layer 210 is formedbetween the Ndrift region 130 and the P-substrate 150. The heavily dopedN-type buried layer 210 forms the base of the parasitic PNP bipolartransistor 110. A heavily doped N-type sinker 220 is provided from ashallow trench isolation (STI) structure down to the N-type buried layer210. The N-type sinker 220 separates the Ndrift region 130 from a P-typeepitaxial layer 230 (P-EPI 230) as shown in FIG. 2.

In order to minimize the beta of the parasitic PNP bipolar transistor110 it is necessary to have a wide base width and a high dopingconcentration. However, the width of the N-type buried layer 210 isdetermined by the diffusion process. This means that it is not possibleto simultaneously achieve a wide base width and a high dopingconcentration. This is illustrated in the structure 300 that is shownFIG. 3. When the width of the N-type buried layer 210 has a relativelysmall base width (designated with the numeral 310 in FIG. 3) then thepeak doping profile is relatively high (designated with the numeral 320in FIG. 3). When the width of the N-type buried layer 210 has arelatively wide base width (designated with the numeral 330 in FIG. 3)then the peak doping profile is relatively low (designated with thenumeral 340 in FIG. 3). This prior art approach has a significantlimitation in that it is not possible to achieve both a wide base widthand a high doping concentration at the same time.

One prior art approach to reducing the effect of the presence of theparasitic NPN bipolar transistor 120 is shown in the structure 400 thatis shown in FIG. 4. A heavily doped N-type guard ring 410 is formed inthe P-Substrate 150 as shown in FIG. 4. A P-type region 420 is alsoformed between the “shallow trench isolation” structures as shown inFIG. 4.

This causes a protection NPN bipolar transistor 430 to be formed betweenthe Ndrift region 130 and N-type guard ring 410. The P-type region 420provides the base of the protection NPN bipolar transistor 430. TheNdrift region 130 provides the emitter for the protection NPN bipolartransistor 430 and the N-type guard ring 410 provides the collector forthe protection NPN bipolar transistor 430.

As the collector of the protection NPN bipolar transistor 430 the N-typeguard ring 410 reduces the amount of current that flows from the Nwell160. However, in spite of the helpful effect of the presence of theprotection NPN bipolar transistor 430, the parasitic NPN bipolartransistor 120 still exists. Therefore, there is still some currentflowing from the Nwell 160 that contributes to the malfunction of thestructure 400 that is shown in FIG. 4. This prior art approach has asignificant limitation in that it is not possible to completely stop thecurrent that is due to the presence of the parasitic NPN bipolartransistor 120.

Therefore, there is a need in the art for a system and method that iscapable of manufacturing lateral diffusion metal oxide semiconductor(LDMOS) transistors that reduces and minimizes the effect of parasiticbipolar transistors within the lateral diffusion metal oxidesemiconductor (LDMOS) transistors.

SUMMARY OF THE INVENTION

To address the above-discussed deficiencies of the prior art, it is aprimary object of the present invention to provide a manufacturingmethod that reduces and minimizes the effect of parasitic bipolartransistors within lateral diffusion metal oxide semiconductor (LDMOS)transistors.

An advantageous embodiment of the invention comprises an N-type lateraldiffusion metal oxide semiconductor (LDMOS) transistor device thatminimizes the effect of a parasitic PNP bipolar transistor within theLDMOS transistor device. This embodiment of the LDMOS transistor devicecomprises a first N-type buried layer and a second N-type buried layer.The use of two buried layers increases the effective base width of theparasitic PNP bipolar transistor without decreasing the peak dopingconcentration in the base of the PNP bipolar transistor. This minimizesthe effect of the parasitic PNP bipolar transistor.

Another advantageous of the invention comprises an N-type lateraldiffusion metal oxide semiconductor (LDMOS) transistor device thatminimizes the effect of a parasitic NPN bipolar transistor within theLDMOS transistor device. This embodiment of the LDMOS transistor devicecomprises a first N-type buried layer. A second N-type buried layer isformed on a first portion of the first N-type buried layer and a P-typeburied layer is formed on a second portion of the first N-type buriedlayer. A Pwell is also formed that extends down to the P-type buriedlayer. These structures form a protection PNP bipolar transistor thatminimizes the effect of the parasitic NPN bipolar transistor.

The foregoing has outlined rather broadly the features and technicaladvantages of the present invention so that those skilled in the art maybetter understand the detailed description of the invention thatfollows. Additional features and advantages of the invention will bedescribed hereinafter that form the subject of the claims of theinvention. Those skilled in the art should appreciate that they mayreadily use the conception and the specific embodiment disclosed as abasis for modifying or designing other structures for carrying out thesame purposes of the present invention. Those skilled in the art shouldalso realize that such equivalent constructions do not depart from thespirit and scope of the invention in its broadest form.

Before undertaking the Detailed Description of the Invention below, itmay be advantageous to set forth definitions of certain words andphrases used throughout this patent document: the terms “include” and“comprise,” as well as derivatives thereof, mean inclusion withoutlimitation; the term “or,” is inclusive, meaning and/or; the phrases“associated with” and “associated therewith,” as well as derivativesthereof, may mean to include, be included within, interconnect with,contain, be contained within, connect to or with, couple to or with, becommunicable with, cooperate with, interleave, juxtapose, be proximateto, be bound to or with, have, have a property of, or the like.Definitions for certain words and phrases are provided throughout thispatent document, those of ordinary skill in the art should understandthat in many, if not most instances, such definitions apply to prioruses, as well as future uses, of such defined words and phrases.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present invention and itsadvantages, reference is now made to the following description taken inconjunction with the accompanying drawings, in which like referencenumerals represent like parts:

FIG. 1 is a schematic cross sectional view showing a prior art N-typelateral diffusion metal oxide semiconductor (LDMOS) transistor devicewith a parasitic PNP bipolar transistor and a parasitic NPN bipolartransistor;

FIG. 2 is a schematic cross sectional view showing a prior art N-typeburied layer designed to minimize the effect of a parasitic PNP bipolartransistor in the device shown in FIG. 1;

FIG. 3 is a schematic cross sectional view showing two different basewidths and associated doping profiles for the prior art N-type buriedlayer that is shown in FIG. 2;

FIG. 4 is a schematic cross sectional view showing a prior art N-typeguard ring designed to minimize the effect of a parasitic NPN bipolartransistor in the device shown in FIG. 1;

FIG. 5 is a schematic cross sectional view showing an advantageousembodiment of an N-type lateral diffusion metal oxide semiconductor(LDMOS) transistor device of the present invention that minimizes theeffect of a parasitic PNP bipolar transistor;

FIG. 6 is a schematic cross sectional view showing an advantageousembodiment of an N-type lateral diffusion metal oxide semiconductor(LDMOS) transistor device of the present invention that minimizes theeffect of a parasitic NPN bipolar transistor;

FIGS. 7 through 11 illustrate sequential steps in the manufacture of anN-type lateral diffusion metal oxide semiconductor (LDMOS) transistordevice of the present invention in accordance with an advantageousembodiment of the method of the present invention;

FIG. 12 illustrates a flow chart showing the steps of an advantageousembodiment of the method of the present invention for manufacturing ahigh side DMOS device; and

FIG. 13 illustrates a flow chart showing the steps of an advantageousembodiment of the method of the present invention for manufacturing alow side DMOS device.

DETAILED DESCRIPTION OF THE INVENTION

FIGS. 5 through 13 and the various embodiments used to describe theprinciples of the present invention in this patent document are by wayof illustration only and should not be construed in any way to limit thescope of the invention. Those skilled in the art will understand thatthe principles of the present invention may be implemented in any typeof suitably arranged lateral diffusion metal oxide semiconductor (LDMOS)transistor device. To simplify the drawings the reference numerals fromprevious drawings will sometimes not be repeated for structures thathave already been identified.

The method of the present invention for manufacturing an N-type lateraldiffusion metal oxide semiconductor (LDMOS) transistor device createstwo N-type buried layers and creates two epitaxial layers. The method ofmanufacture will be described in more detail later in this patentdocument.

FIG. 5 is a schematic cross sectional view showing an advantageousembodiment of an N-type lateral diffusion metal oxide semiconductor(LDMOS) transistor device 500 of the present invention that minimizes anoperation of a parasitic PNP bipolar transistor that is present in theLMDMOS transistor device 500. Device 500 comprises a P-Substrate 510. Afirst N-type buried layer 520 is formed on the P-Substrate 510. A secondN-type buried layer 530 is formed on the first N-type buried layer 520.

A heavily doped N-type sinker 540 is provided from a shallow trenchisolation (STI) structure down to the second N-type buried layer 530.The N-type sinker 540 separates the Ndrift region 550 from the secondepitaxial layer (not shown in FIG. 5). The parasitic PNP bipolartransistor 560 extends from the P-type body 570 through the secondN-type buried layer 530 and through the first N-type buried layer 520down to the P-Substrate 510.

The use of two N-type buried layers (520 and 530) increases theeffective base width without sacrificing the peak doping concentration.FIG. 5 shows that the peak doping profile for the first N-type buriedlayer 520 (designated with the numeral 580 in FIG. 5) is relativelyhigh. FIG. 5 shows that the peak doping profile for the second N-typeburied layer 530 (designated with the numeral 590 in FIG. 5) is alsorelatively high.

The manufacturing method of the present invention provides both arelatively wide base width and a relatively high doping concentrationfor the base of the parasitic PNP bipolar transistor 560. Thecombination of these features minimizes the beta of the parasitic PNPbipolar transistor 560.

FIG. 6 is a schematic cross sectional view showing an advantageousembodiment of an N-type lateral diffusion metal oxide semiconductor(LDMOS) transistor device 600 of the present invention that minimizes anoperation of a parasitic NPN bipolar transistor that is present in theLDMOS transistor device 600. Device 600 comprises a P-Substrate 610. Afirst N-type buried layer 615 is formed on the P-Substrate 610. A P-typeburied layer 620 and a second N-type buried layer 625 is formed on thefirst N-type buried layer 615.

A heavily doped N-type sinker 630 is provided that extends from anN-type region 635 down to the second N-type buried layer 625. A Pwell640 is provided from a P-type region 645 down to the P-type buried layer620. A protection NPN bipolar transistor 650 is formed having (1) acollector connected to the first N-type buried layer 615 and (2) a baseconnected to the Pwell 640 and (3) an emitter connected to the Ndriftregion 655 through the first N-type buried layer 615 and through theP-type buried layer 620. The parasitic NPN bipolar transistor that wouldotherwise be connected to Nwell 660 is completely removed.

The N-type lateral diffusion metal oxide semiconductor (LDMOS)transistor device 500 that is shown in FIG. 5 represents a high sideLDMOS transistor device. The N-type lateral diffusion metal oxidesemiconductor (LDMOS) transistor device 600 that is shown in FIG. 6represents a low side LDMOS transistor device. These devices provideefficient an LDMOS structure for inductive full load or half bridgeconverter circuits driving very high current.

FIGS. 7 through 11 illustrate sequential steps in the manufacture of anN-type lateral diffusion metal oxide semiconductor (LDMOS) transistordevice of the present invention in accordance with an advantageousembodiment of the method of the present invention.

A P-Substrate 710 is formed in the first step of the manufacturingmethod. A high side DMOS structure will be formed on the left side ofFIG. 7 and a low side DMOS structure will be formed on the right side ofFIG. 7. Then a first N-type buried layer mask and implant procedure (andburied layer drive in procedure) is performed to form the first N-typeburied layer 720. Then the first epitaxial layer 730 (1^(st) EPI 730) isformed. The result of these steps is shown in FIG. 7.

In the next step a second N-type buried layer mask and implant procedure(and buried layer drive in procedure) is performed to form the secondN-type buried layer 810. Then a P-type buried layer mask and implantprocedure (and buried layer drive in procedure) is performed to form theP-type buried layer 820. Then the second epitaxial layer 830 (2_(nd) EPI830) is formed. The result of these steps is shown in FIG. 8.

Then an N-type sinker mask and implant procedure is performed to formN-type sinker 910 through the second epitaxial layer 830 down to thesecond N-type buried layer 810. Then an Ndrift mask and implantprocedure (and drive in procedure) is performed to form the Ndriftregion 920 down to the second N-type buried layer 810. The result ofthese steps is shown in FIG. 9.

Then a conventional composite (STI) process is used to form shallowtrench isolation (STI) regions as shown in FIG. 10. Then a Pwell maskand implant procedure is performed to form the Pwell region 1010. Theresult of these steps is shown in FIG. 10.

Then a gate deposit procedure and a gate mask and etch procedure isperformed to form gate 1110 and gate 1120. Next a mask and implantprocedure is performed to form P-type body 1130 and to form P-type body1140. Then an NLDD and PLDD mask and implant procedure is performed andan N+ and P+ mask and implant procedure is performed to form the N+ andP+ regions (not numbered in FIG. 11). Then an anneal process isperformed and a metallization process is performed to complete themanufacturing process. The final result of the manufacturing process isshown in FIG. 11.

The manufacturing process described with reference to FIGS. 7 through 11illustrates how to simultaneously manufacture a high side DMOS deviceand a low side DMOS device of the present invention. It is also possibleto separately manufacture the high side DMOS device and the low sideDMOS device of the present invention. This is shown in FIG. 12 and inFIG. 13.

FIG. 12 illustrates a flow chart 1200 showing the steps of anadvantageous embodiment of the method of the invention for manufacturinga high side DMOS device. In the first step of the method 1200 anunderlying P-substrate 710 is provided (step 1210). Then a first N-typeburied layer 720 is formed on the P-substrate 710 (step 1215). Then afirst epitaxial layer 730 is formed on the first N-type buried layer 720(step 1220).

Then a second N-type buried layer 810 is formed on the first N-typeburied layer 720 (step 1225). Then a second epitaxial layer 830 isformed on the second N-type buried layer 810 (step 1230). Then an N-typesinker 910 is formed through the second epitaxial layer 830 down to thesecond N-type buried layer 810 (step 1235). Then an Ndrift region 920 isformed down to the second N-type buried layer 810 (step 1240).

Then shallow trench isolation regions are formed over the N-type sinker910 and over the Ndrift region 920 (step 1245). Then a gate structure1110 is formed over the Ndrift region 920 (step 1250). Then a P-typebody 1130 is formed in the Ndrift region 920 (step 1255). Then N+ and P+regions are formed to form the source and drain regions for the highside DMOS device (step 1260).

FIG. 13 illustrates a flow chart 1300 showing the steps of anadvantageous embodiment of the method of the invention for manufacturinga low side DMOS device. In the first step of the method 1300 anunderlying P-substrate 710 is provided (step 1310). Then a first N-typeburied layer 720 is formed on the P-substrate 710 (step 1315). Then afirst epitaxial layer 730 is formed on the first N-type buried layer 720(step 1320).

Then a second N-type buried layer 810 is formed on a first portion ofthe first N-type buried layer 720 and a P-type buried layer 820 isformed on a second portion of the first N-type buried layer 720 (step1325). Then a second epitaxial layer 830 is formed on the second N-typeburied layer 810 and on the P-type buried layer 820 (step 1330). Then anN-type sinker 910 is formed through the second epitaxial layer 830 downto the second N-type buried layer 810 (step 1335). Then an Ndrift region920 and a Pwell region 1010 are formed down to the P-type buried layer820 (step 1340).

Then shallow trench isolation regions are formed over the N-type sinker910 and over the Ndrift region 920 and over the Pwell 1010 (step 1345).Then a gate structure 1120 is formed over the Ndrift region 920 (step1350). Then a P-type body 1140 is formed in the Ndrift region 920 (step1355). Then N+ and P+ regions are formed to form the source and drainregions for the low side DMOS device (step 1360).

Although the present invention has been described with an exemplaryembodiment, various changes and modifications may be suggested to oneskilled in the art. It is intended that the present invention encompasssuch changes and modifications as fall within the scope of the appendedclaims.

1. A method for manufacturing an N-type lateral diffusion metal oxidesemiconductor transistor, wherein the method comprises the steps of:forming a P-type substrate; forming a first N-type buried layer on theP-type substrate; forming a first epitaxial layer on the first N-typeburied layer; forming a second N-type buried layer on the first N-typeburied layer; forming a second epitaxial layer on the second N-typeburied layer.
 2. The method as set forth in claim 1 further comprisingthe steps of forming an N-type sinker through the second epitaxial layerdown to the second N-type buried layer; forming an Ndrift region in thesecond epitaxial layer down to the second N-type buried layer; andforming shallow trench isolation regions over the N-type sinker and overthe Ndrift region.
 3. The method as set forth in claim 2 furthercomprising the steps of forming a gate structure over the Ndrift region;and forming a P-type body in the Ndrift region; and forming a sourceregion in the P-type body; and forming a drain region in the Ndriftregion.
 4. The method as set forth in claim 3 wherein a combined widthof the first N-type buried layer and of the second N-type buried layerminimizes an operation of a parasitic NPN bipolar transistor in theN-type lateral diffusion metal oxide semiconductor transistor.
 5. Themethod as set forth in claim 3 wherein a peak doping profile of thefirst N-type buried layer and a peak doping profile of the second N-typeburied layer minimize an operation of a parasitic NPN bipolar transistorin the N-type lateral diffusion metal oxide semiconductor transistor. 6.An N-type lateral diffusion metal oxide semiconductor transistorcomprising: a P-type substrate; a first N-type buried layer on theP-type substrate; a first epitaxial layer on the first N-type buriedlayer; a second N-type buried layer on the first N-type buried layer;and a second epitaxial layer on the second N-type buried layer.
 7. TheN-type lateral diffusion metal oxide semiconductor transistor as setforth in claim 6 further comprising: an N-type sinker through the secondepitaxial layer down to the second N-type buried layer; an Ndrift regionin the second epitaxial layer down to the second N-type buried layer;and shallow trench isolation regions over the N-type sinker and over theNdrift region.
 8. The N-type lateral diffusion metal oxide semiconductortransistor as set forth in claim 7 further comprising: a gate structureover the Ndrift region; and a P-type body in the Ndrift region; and asource region in the P-type body; and a drain region in the Ndriftregion.
 9. The N-type lateral diffusion metal oxide semiconductortransistor as set forth in claim 8 wherein a combined width of the firstN-type buried layer and of the second N-type buried layer minimizes anoperation of a parasitic NPN bipolar transistor in the N-type lateraldiffusion metal oxide semiconductor transistor.
 10. The N-type lateraldiffusion metal oxide semiconductor transistor as set forth in claim 8wherein a peak doping profile of the first N-type buried layer and apeak doping profile of the second N-type buried layer minimize anoperation of a parasitic NPN bipolar transistor in the N-type lateraldiffusion metal oxide semiconductor transistor. 11.-15. (canceled) 16.An N-type lateral diffusion metal oxide semiconductor transistorcomprising: a P-type substrate; a first N-type buried layer on theP-type substrate; a first epitaxial layer on the first N-type buriedlayer; a second N-type buried layer on a first portion of the firstN-type buried layer; a P-type buried layer on a second portion of thefirst N-type buried layer; and a second epitaxial layer on the secondN-type buried layer and on the P-type buried layer.
 17. The N-typelateral diffusion metal oxide semiconductor transistor as set forth inclaim 16 further comprising: an N-type sinker through the secondepitaxial layer down to the second N-type buried layer; an Ndrift regionin the second epitaxial layer that extends down to the P-type buriedlayer; a P well region in the second epitaxial layer that extends downto the P-type buried layer; and shallow trench isolation regions overthe N-type sinker and over the Ndrift region and over the P well region.18. The N-type lateral diffusion metal oxide semiconductor transistor asset forth in claim 17 further comprising: a gate structure over theNdrift region; and a P-type body in the Ndrift region; and a sourceregion in the P-type body; and a drain region in the Ndrift region. 19.The N-type lateral diffusion metal oxide semiconductor transistor as setforth in claim 18 wherein a protection NPN bipolar transistor is formedwithin the N-type lateral diffusion metal oxide semiconductor transistorthat minimizes an operation of a parasitic NPN bipolar transistor withinthe N-type lateral diffusion metal oxide semiconductor transistor. 20.The N-type lateral diffusion metal oxide semiconductor transistor as setforth in claim 19 wherein a collector of the protection NPN bipolartransistor is connected to the first N-type buried layer; a base of theprotection NPN bipolar transistor is connected to the P well region; andan emitter of the protection NPN bipolar transistor is connected to theNdrift region through the first N-type buried layer and through theP-type buried layer.